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[¹°¸®ÀüÀÚ2] °úÁ¦2 ´Ü¿ø ¿ä¾à Fabrication of pn junctions / 1. Thermal Oxidation 2. Diffusion 3. Rapid Thermal Processing 4. Ion Implantation 5. Chemical Vapor Deposition (CVD) 6. hotolithography 7. Stepper 8. Lmin&DOF 9. Chemical Mechanical Polishing (CMP) 10. Plasmas 11. Etching 12. Metallization 13. Identification of source of data / 1. Therm¡¦ |
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[¹°¸®ÀüÀÚ2] °úÁ¦2 ´Ü¿ø ¿ä¾à Fabrication of pn junctions / 1. Thermal Oxidation 2. Diffusion 3. Rapid Thermal Processing 4. Ion Implantation 5. Chemical Vapor Deposition (CVD) 6. hotolithography 7. Stepper 8. Lmin&DOF 9. Chemical Mechanical Polishing (CMP) 10. Plasmas 11. Etching 12. Metallization 13. Identification of source of data / 1. Therm¡¦ |
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»ý¸®ÇÐ Áß°£°í»ç, Ç×»ó¼º, tight juction°ú gap junction, ºûÀÇ °¨Áö / 1. ¿ì¸® ¸ö¿¡¼ ÀϾ´Â Ç×»ó¼º ±âÀüÀÇ ¿¹¸¦ Çϳª Á¦½ÃÇÏ°í, ¾î¶°ÇÑ ±âÀü(½Å°æ°è ¶Ç´Â ³»ºÐºñ°è)¿¡ ÀÇÇØ Ç×»ó¼ºÀÌ À¯ÁöµÇ´ÂÁö ¼³¸íÇϽÿÀ. 2. Cell-to-cell adhesion¿¡¼ tight junction°ú gap junctionÀÇ Â÷ÀÌÁ¡À» ¼³¸íÇÏ°í, À̵é junctionÀÌ ºÐÆ÷ÇÏ´Â ±â°ü(Á¶Á÷)À» Çϳª Á¦½ÃÇϽÿÀ. 3. ¾îµÎ¿î °÷°ú ¹àÀº °÷¿¡¡¦ |
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ȼøÀü³²´ëÇб³º´¿ø ÄÉÀ̽º Rectosigmoid junction cancer / ¥°. °Ç°·Â ¥±. Áø´ÜÀû °Ë»ç°á°ú ¹× ÀÇÀÇ ¥². ¾à¹°¿ä¹ý ¥³. ¼ö¼ú Àü/ÈÄ »çÁ¤ ¹× °£È£ ¥´. °£È£Áø´Ü, ÁßÀç ¹× ±³À° ¥µ. EBP / ¥°. °Ç°·Â ȯÀÚÀÇ °Ç°·ÂÀº Á÷Àå°ú SÀÚ °áÀåÀ» Æ÷ÇÔÇÑ Á÷°áÀå Á¢ÇպΠ¾Ï Áø´Ü¿¡ ÀÖ¾î Áß¿äÇÑ Á¤º¸¸¦ Á¦°øÇÑ´Ù. ÇØ´ç ȯÀÚ´Â 60´ë ÃʹÝÀÇ ³²¼ºÀ¸·Î, ÁÖ¿ä Áõ»óÀ¸·Î´Â Áö¼ÓÀûÀÎ ÇϺ¹ºÎ ÅëÁõ, ¡¦ |
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P-N junctionÀ» ÀÌ¿ëÇÑ ±Ý¼Ó»êȹ° ¹ÝµµÃ¼ÀÇ °¡½º ¼¾½Ì °¨ÀÀº¯È ºÐ¼® ½ÇÇ躸°í¼ / 1) ÀåÁ¡ 2) ´ÜÁ¡ 4. DC Sputtering / 1) ÀåÁ¡ 2) ´ÜÁ¡ 5. VLS 6. Ãâó 1. ½ÇÇè³»¿ë P-N Á¢ÇÕÀ» ÀÌ¿ëÇÑ ±Ý¼Ó»êȹ° ¹ÝµµÃ¼ÀÇ °¡½º ¼¾½Ì °¨ÀÀº¯È ºÐ¼® ½ÇÇè¿¡¼´Â ´Ù¾çÇÑ °¡½ºÀÇ Á¸Àç¿¡ µû¸¥ ¼¾¼ ¹ÝÀÀÀ» Æò°¡Çϱâ À§ÇØ ¿©·¯ °¡Áö ½ÇÇè ÀýÂ÷¸¦ ÁøÇàÇÏ¿´´Ù. ½ÇÇè¿¡ »ç¿ëµÈ ¼¾¼´Â ÀϹÝÀûÀ¸·Î n¡¦ |
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plasmodesmataÀÇ ±¸Á¶ ¹× ±â´É gap junction°úÀÇ À¯»ç¼º°ú Â÷ÀÌÁ¡ / 1. plasmodesmata ±¸Á¶ 2. plasmodesmata ±â´É 3. gap junction°ú plasmodesmata Â÷ÀÌÁ¡°ú À¯»ç¼º / 1. plasmodesmata ±¸Á¶ Plasmodesmata´Â ½Ä¹° ¼¼Æ÷ °£ÀÇ Á÷Á¢ÀûÀÎ Åë½Å Åë·Î·Î ±â´ÉÇÏ´Â ¹Ì¼¼ÇÑ ¼¼°ü ±¸Á¶ÀÌ´Ù. ÀÌ ±¸Á¶´Â ½Ä¹° ¼¼Æ÷º®À» °¡·ÎÁú·¯ ¿¬°áµÇ¾î ÀÖÀ¸¸ç, ¼¼Æ÷ »çÀÌÀÇ ¹°Áú À̵¿À» °¡´ÉÇÏ°Ô ÇÑ´Ù. Pl¡¦ |
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PN Junction ¹ßÇ¥ PPT / 1.What is PN Junction 2.PN Junction at Thermal Equilibrium 3.PN Junction at Forward Bias 4.PN Junction at Reverse Bias 5. Junction Capacitance 6.Sources / 1.What is PN Junction PN JunctionÀº ¹ÝµµÃ¼ ¹°Áú¿¡¼ Áß¿äÇÑ ±¸Á¶·Î, pÇü ¹ÝµµÃ¼¿Í nÇü ¹ÝµµÃ¼°¡ Á¢ÇÕµÈ ÁöÁ¡À» ÀǹÌÇÑ´Ù. PÇü ¹ÝµµÃ¼´Â ¾ç°ø, Áï °áÇÕÀÌ ²÷¾îÁø ÀüÀÚÀÇ ÀÚ¸®¸¦ ³ªÅ¸³»¡¦ |
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pn junction ¿¡³ÊÁö¹êµå / 1. p-n JunctionÀÇ Á¤¼ºÀû ¼³¸í 2. p-n JunctionÀÇ Á¤·®Àû ¼³¸í 3. p-n JunctionÀÇ µ¿ÀÛ ¸ðµå 4. p-n Junction DiodeÀÇ I-V ¹æÁ¤½Ä 5. Bias Voltage Å©±â¿¡ µû¸¥ p-n Junction DiodeÀÇ µ¿ÀÛ »óÅ ¼³¸í / 1. p-n JunctionÀÇ Á¤¼ºÀû ¼³¸í p-n Á¢ÇÕÀÇ ¿¡³ÊÁö ¹êµå ±¸Á¶´Â ¹ÝµµÃ¼ ¹°Áú¿¡¼ Áß¿äÇÑ °³³äÀÌ´Ù. p-n Á¢ÇÕÀº pÇü ¹ÝµµÃ¼¿Í nÇü ¹ÝµµÃ¼°¡ Á¢ÇÕµÈ ±¸¡¦ |
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[A£«]¾ç±Ø¼º Á¢ÇÕ Æ®·£Áö½ºÅÍ(BJT) °á°ú·¹Æ÷Æ®(Fundamentals of bipolar junction transistor and switching experiment) / ¥°. Introduction 1.1 Purpose 1.2 Theoretical Background ¥±. Methods 2.1 Requirements 2.2 Procedure ¥². Results ¥³. Discussion 4.1 Overall Discussion 4.2 Causes of Errors ¥´. Conclusion ¥µ. References ¥¶. Appendices / ¥°¡¦ |
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¹ÝµµÃ¼ÀÇ ¿ø¸®(P-N Junction) / 1. ¹ÝµµÃ¼¶õ ¹«¾ùÀΰ¡ 2. P-N Junction / 1. ¹ÝµµÃ¼¶õ ¹«¾ùÀΰ¡ ¹ÝµµÃ¼´Â Àü±â Àüµµ¼º¿¡¼ µµÃ¼¿Í Àý¿¬Ã¼ »çÀÌ¿¡ À§Ä¡ÇÏ´Â ¹°Áú·Î, ÀüÀÚ »ê¾÷¿¡¼ Áß¿äÇÑ ¿ªÇÒÀ» ÇÑ´Ù. ¹ÝµµÃ¼ÀÇ ´ëÇ¥ÀûÀÎ ¿¹·Î´Â ½Ç¸®ÄÜÀÌ ÀÖÀ¸¸ç, À̸¦ ±â¹ÝÀ¸·Î ´Ù¾çÇÑ ÀüÀÚ ¼ÒÀÚ°¡ Á¦À۵ȴÙ. ¹ÝµµÃ¼ÀÇ °¡Àå Å« Ư¡Àº ±× Àüµµ¼º º¯È¸¦ ´Ù¾çÇÑ ¿ÜºÎ ¿äÀÎ, Áï ¿Âµµ, ºÒ¼ø¹°ÀÇ µµÇÎ, ¡¦ |
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