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Çмúº¸°í¼­ Growth of Si nanowires on a Si(111) by molecular beam epitaxy

Çмúº¸°í¼­ Growth of Si nanowires on a Si(111) by molecular beam epitaxy

Çмúº¸°í¼­ Growth of Si nanowires on a Si(111) by molecular beam epitaxy / 1. ¼­·Ð 2. ½ÇÇè¹æ¹ý 3. °á°ú 4. °á·Ð 5. Âü°í¹®Çå / 1. ¼­·Ð ½Ç¸®ÄÜ ³ª³ë¿ÍÀ̾î(Si nanowire)´Â ³ª³ë±â¼ú ºÐ¾ß¿¡¼­ Áß¿äÇÑ ¿¬±¸ ÁÖÁ¦·Î ºÎ°¢µÇ°í ÀÖÀ¸¸ç, ÀÌ´Â ÀüÀÚ±â±â, ¼¾¼­, žç ÀüÁö ¹× ³ª³ë ÀüÀÚ ¼ÒÀÚÀÇ ÀáÀç·Â ÀÖ´Â ÀÀ¿ë °¡´É¼º ´öºÐÀÌ´Ù. ÀÌ·¯ÇÑ ³ª³ë¿ÍÀÌ¾î ±¸Á¶´Â ±ØÈ÷ ÀÛÀº Á÷°æ°ú ±ä ±æ¡¦
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Á¹¾÷³í¹®(Æ÷½ºÅÍ) Fabrication of GaN on Si hierarchical nanowire

Á¹¾÷³í¹®(Æ÷½ºÅÍ) Fabrication of GaN on Si hierarchical nanowire

Á¹¾÷³í¹®(Æ÷½ºÅÍ) Fabrication of GaN on Si hierarchical nanowire / 1. Introduction 1) Motivation 2) Aim of work 3) Growth scheme 2. Experiments 1) MACE 2) GaN -VLS growth 3. Result And Discussion 1) Si NWs Optimization 2) GaN on Si hierarchical NWs Optimization 3) Reflection 4. Summary / 1. Introduction GaN(°¶·ý ³ªÀÌÆ®¶óÀ̵å)Àº ¹ÝµµÃ¼ ºÐ¾ß¿¡¡¦
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¼¼¶ó¹Í°øÇнÇÇè º¸°í¼­ (Image processing , Nanowire fabrication report)

¼¼¶ó¹Í°øÇнÇÇè º¸°í¼­ (Image processing , Nanowire fabrication report)

¼¼¶ó¹Í°øÇнÇÇè º¸°í¼­ (Image processing , Nanowire fabrication report) / 1. ºÐ¼®ÀÚ·á 2. report.docx 3. supplement.pdf / 1. ºÐ¼®ÀÚ·á ¼¼¶ó¹Í°øÇнÇÇè¿¡¼­ ¼öÇàÇÑ À̹ÌÁö ó¸® ¹× ³ª³ë¿ÍÀ̾î Á¦ÀÛ¿¡ °üÇÑ ºÐ¼® ÀÚ·á´Â ½ÇÇè °á°ú¿Í ±× Àǹ̸¦ ¸íÈ®È÷ ÀÌÇØÇÏ´Â µ¥ ÇÊ¿äÇÑ Áß¿äÇÑ ¿ä¼ÒÀÌ´Ù. ÀÌ ¼½¼ÇÀº ½ÇÇè¿¡¼­ ¼öÁýÇÑ µ¥ÀÌÅ͸¦ Á¤¸®ÇÏ°í Çؼ®ÇÔÀ¸·Î½á °á°úÀÇ ÀÇÀǸ¦ µå·¯³»´Â µ¥¡¦
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Silicon nanowireÀÇ ÇÕ¼º

Silicon nanowireÀÇ ÇÕ¼º

Silicon nanowireÀÇ ÇÕ¼º / Àç·á°øÇнÇÇè °á°úº¸°í¼­ - Silicon nanowireÀÇ ÇÕ¼º - 1. Silicon nanowire¸¦ ÇÕ¼ºÇÏ´Â ¿©·¯ ¹æ¹ý¿¡ ´ëÇÑ Á¶»ç. 1) vapor-liquid-solid (VLS) growth - ÀÌ ¹æ½ÄÀº ÇöÀç±îÁö nanowire¸¦ ¸¸µå´Âµ¥ °¡Àå Àß ¾Ë·ÁÁø ¹æ¹ýÀÌ´Ù. °¡Àå ¸ÕÀú Ã˸ŷμ­ ±ÝÀÇ ³ª³ë ÀÔÀÚ°¡ ½Ç¸®ÄÜ ¿þÀÌÆÛ À§¿¡ µµÆ÷µÇ°í, ÀÌ ¿þÀÌÆÛ´Â Áø°ø üÀÓ¹ö ¾È¿¡¼­ ±Ý°ú ½Ã¸®ÄÜÀÇ °øÀ¶Á¡ÀÌ»óÀÇ ¿Â¡¦
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