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VLSI¼³°è¹×½ÇÇèPractice1 / 1. addcnter.v 2. addcnter_TB.v 3. DFF.v 4. ripplecarrycounter.v 5. ripplecarrycounter_TB.v 6. TFF.v 7. VLSI¼³°è¹×½ÇÇèPractice1.hwp / 1. addcnter.v addcounter. v´Â VLSI ¼³°è¿¡¼ ±âº»ÀûÀÎ Ä«¿îÅÍ ±â´ÉÀ» ±¸ÇöÇÏ´Â Verilog ÆÄÀÏÀÌ´Ù. ÀÌ ÆÄÀÏÀº ÁÖ·Î ºñµ¿±â Ä«¿îÅÍ È¤Àº µ¿±â Ä«¿îÅ͸¦ ¼³°èÇÏ´Â µ¥ »ç¿ëµÈ´Ù. Ä«¿îÅʹ Ŭ·° ½ÅÈ£¿¡ µû¶ó °ª¡¦ |
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VLSI¼³°è¹×½ÇÇèPractice4 / 1. carry_select_adder_20b.v 2. csa.v 3. D_FF_1.v 4. D_FF_11.v 5. D_FF_12.v 6. D_FF_16.v 7. D_FF_2.v 8. D_FF_20.v 9. D_FF_21.v 10. D_FF_22.v 11. D_FF_23.v 12. D_FF_3.v 13. D_FF_4.v 14. D_FF_5.v 15. D_FF_6.v 16. FA.v 17. FA_4.v 18. mux_2to1_1b.v 19. mux_2to1_2b.v 20. mux_2to1_3b.v 21. mux_2to1_4b.v 22. mux_2to1_5¡¦ |
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VLSI ÇÁ·ÎÁ§Æ® º¸°í¼ / 1. Microprocessor 1) 6T SRAM Cell 2) Precharge 3) Sense amplifier 4) Write Driver 5) MUX 6) Controller 2. °íÂû / 1. Microprocessor ¸¶ÀÌÅ©·ÎÇÁ·Î¼¼¼´Â Çö´ë ÄÄÇ»ÅÍ ½Ã½ºÅÛÀÇ ÇÙ½É ±¸¼º¿ä¼Ò·Î, ´Ù¾çÇÑ ±â´ÉÀ» ¼öÇàÇÏ´Â ±âÃÊÀûÀΠó¸® ÀåÄ¡ÀÌ´Ù. CPU(Central Processing Unit)ÀÇ ±â´ÉÀ» °ÅÀÇ ¿Ïº®ÇÏ°Ô ¼öÇàÇϸç, ¸í·É¾î ÁýÇÕ, µ¥ÀÌÅÍ Ã³¸®, Á¦¡¦ |
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[°øÇÐ,±â¼ú] Á¤º¸Åë½Å ¼³°è - ÁýÀû ȸ·Î(Very Large Scale Integrated Circuit; VLSI)ÀÇ ¼³°è °úÁ¤ / ÁýÀûȸ·Î(VLSI)ÀÇ ¼³°è °úÁ¤ VLSI ¼³°è Àü¹ÝºÎ : Gate Level ¼³°è ÈĹݺΠ: Layout µ¥ÀÌÅÍ »ý¼º ÃÖ±ÙÀÇ ¼³°è Àü¹ÝºÎ : µ¿ÀÛÀû ¼³°è(Behavioral Design) ` Gate Level ¼³°è ÈĹݺΠ: Layout µ¥ÀÌÅÍ »ý¼º 2.1»óÀ§ ·¹º§ ÇÕ¼º(High Level Synthesis) 2ºñÆ® ÀÔ·Â 4ºñÆ® Ãâ·Â X(0) F(0)¡¦ |
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[°øÇÐ][½Ã½ºÅÛ¼³°è] CMOS VLSI LT ½ºÆÄÀ̽º / Example1 (1) Control Panel - LTspiceÀÇ Á¦¾î ¹× ¼³Á¤À» ÇÒ ¼ö ÀÖ´Ù. (2) ȸ·Î ¡è Highlight Net(°°Àº ³ëµå Ç¥½Ã) (3) ȸ·Î - Transient Analysis : ½Ã°£¿¡ µû¸¥ ȸ·Î ºÐ¼® - DC Analysis : DC Ư¼º ºÐ¼® Example2 (1) OP-AMP ÁõÆø±â ¼³°è opampÀÇ ³»ºÎȸ·Î¸¦ ²Ù¹Î´ÙHierarchyÅÇ¿¡¼ Create a new symbol Ŭ¸¯ - draw±â´ÉÀ¸·Î s¡¦ |
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ºÎ°æ´ëÇб³ VLSI °úÁ¦(CMOS ÀιöÅÍ) ½ÇÇ躸°í¼ / 1. ¼³°è °úÁ¤ 1) wafer Áغñ 2) n-well 3) active region 4) gate 5) S/D_NMOS 6) S/D_PMOS 7) annealing 8) contact 9) metallization 10) electrode 11) mask 2. µµÇγóµµ, Junction depth 1) NMOSÀÇ µµÇγóµµ, Junction depth 2) PMOSÀÇ µµÇγóµµ, Junction depth 3. ÀÔÃâ·Â ÆÄÇü ºñ±³ 1) DC 2) 1kHz 3) 100kHz 4) ¡¦ |
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VLSI ¼³°è ¹× ½ÇÇè Practice10 / 1. Butter.v 2. Butter_DFF.v 3. D_FF_16.v 4. D_FF_32.v 5. mul.v 6. mul_DFF.v 7. stimulus_Butter.v 8. stimulus_mul.v 9. VLSI¼³°è¹×½ÇÇèPractice10.hwp / 1. Butter.v Butter. v´Â µðÁöÅРȸ·Î ¼³°è¿¡¼ »ç¿ëµÇ¸ç, ÁÖ·Î ÇÊÅÍ µðÀÚÀο¡ °üÇÑ ³»¿ëÀ» Æ÷ÇÔÇÏ°í ÀÖ´Ù. ÀÌ ¼³°è´Â VLSI(ÃÊ´ë·® ÁýÀû ȸ·Î)¿¡¼ÀÇ ÇÊÅÍ ÇÔ¼ö ±¸ÇöÀ» ¸ñÇ¥·Î Çϸ硦 |
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ºÎ°æ´ëÇб³ VLSI °úÁ¦(CMOS ÀιöÅÍ) ½ÇÇ躸°í¼ / 1. ¼³°è °úÁ¤ 1) wafer Áغñ 2) n-well 3) active region 4) gate 5) S/D_NMOS 6) S/D_PMOS 7) annealing 8) contact 9) metallization 10) electrode 11) mask 2. µµÇγóµµ, Junction depth 1) NMOSÀÇ µµÇγóµµ, Junction depth 2) PMOSÀÇ µµÇγóµµ, Junction depth 3. ÀÔÃâ·Â ÆÄÇü ºñ±³ 1) DC 2) 1kHz 3) 100kHz 4) ¡¦ |
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ÀÎÇÏ´ë vlsi 4ÁÖÂ÷ xor / 1. ½Ç½À ÀÌ·Ð 2. ½Ç½À³»¿ë (01)Layout (02) Hspice( Magic ToolÀ» ÀÌ¿ëÇÏ¿© ÃßÃâÇÑ netlistÆÄÀÏ & dc, tran½Ã¹Ä·¹À̼Ç) 3. °íÂû / 1. ½Ç½À ÀÌ·Ð VLSI¿¡¼ XOR °ÔÀÌÆ®´Â µðÁöÅРȸ·Î¿¡¼ Áß¿äÇÑ ±â´ÉÀ» ¼öÇàÇÏ´Â ±âº» ³í¸® °ÔÀÌÆ® Áß ÇϳªÀÌ´Ù. XOR´Â `Exclusive OR`ÀÇ ¾àÀÚ·Î, µÎ ÀÔ·Â °ª Áß Çϳª°¡ ÂüÀÏ ¶§¸¸ Ãâ·ÂÀÌ ÂüÀÌ µÇ´Â Ư¼ºÀ» °¡Áø´Ù. Áï, µÎ¡¦ |
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¡¥ ºÐ¼® / 1. ½Ç½À ÀÌ·Ð ÀιöÅÍ È¸·Î´Â VLSI ȸ·Î ¼³°è¿¡¼ °¡Àå ±âº»ÀûÀ̸鼵µ Áß¿äÇÑ ±¸¼º ¿ä¼ÒÀÌ´Ù. ÀιöÅÍ´Â ÀÔ·Â ½ÅÈ£ÀÇ ³í¸®°ªÀ» ¹ÝÀü½ÃÅ°´Â ±â´ÉÀ» Çϸç, µðÁöÅРȸ·Î¿¡¼ 0°ú 1, Áï ³·Àº Àü¾Ð°ú ³ôÀº Àü¾Ð »çÀÌÀÇ ÀüȯÀ» °¡´ÉÇÏ°Ô ÇÑ´Ù. VLSI¿¡¼ ÀιöÅÍ´Â ÁÖ·Î CMOS(Complementary Metal-Oxide-Semiconductor) ±â¼úÀ» ÀÌ¿ëÇØ ±¸ÇöµÈ´Ù. CMOS ±â¼úÀº nÇü°ú pÇü MOSFET¸¦ °áÇÕ¡¦ |
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